Atomic layer deposition

Atomic layer deposition

Atomic layer deposition (ALD) is a high accuracy thin-film deposition technique which can build the film lay by lay. Our independently designed ALD can realize the deposition of various oxides, nitrides and sulfides. The air circuit is designed to be flexible and adjustable, which’s reaction time is short (single cycle <10s, single reaction time <50ms).Our composite system can realize many functions such as low-temperature plasma surface treatment, low-temperature atomic layer deposition, high-temperature atomic layer deposition and plasma assisted deposition.